Ultrafiltration und Enzyme = The use of enzymes in ultrafiltrationSTUTZ, C.Flüssiges Obst. 1993, Vol 60, Num 7, pp 366-369, issn 0015-4539, 9 p.Conference Paper

A DETERMINATION OF THE ISOTHERMAL COMPRESSIBILITY OF NACLO₃ AND NABRO₃ USING NQR DATA.STUTZ C; EARLY D.1975; J. MAGNET. RESON.; U.S.A.; DA. 1975; VOL. 20; NO 2; PP. 293-299; BIBL. 14 REF.Article

NQR ECHO ENVELOPE MODULATION IN ALPHA -N₂ DUE TO INTRAMOLECULAR DIPOLAR COUPLING.STUTZ C; LI MZ.1977; J. MAGNET. RESON.; U.S.A.; DA. 1977; VOL. 25; NO 1; PP. 95-100; BIBL. 11 REF.Article

Electrochemical Schottky characteristics of ZnO for capacitance-voltage measurementsSTUTZ, C. E.Journal of electronic materials. 2001, Vol 30, Num 12, pp L40-L42, issn 0361-5235Article

Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperaturesYU, P. W; STUTZ, C. E.Journal of electronic materials. 1993, Vol 22, Num 12, pp 1441-1444, issn 0361-5235Article

Photoluminescence excitation of the As_i-V_Ga 0.8eV emission in GaAs grown by molecular beam epitaxy at low temperaturesYU, P. W; STUTZ, C. E.Solid state communications. 1994, Vol 89, Num 3, pp 293-296, issn 0038-1098Article

Analytical two-layer Hall analysis : application to modulation-doped field-effect transistorsLOOK, D. C; STUTZ, C. E; BOZADA, C. A et al.Journal of applied physics. 1993, Vol 74, Num 1, pp 311-314, issn 0021-8979Article

GaAs_κSb_1-κ/In_yAl_1-yAs p-channel heterostructure FET's with high transconductance and low gate leakage currentMARTINEZ, M. J; SCHUERMEYER, F. L; STUTZ, C. E et al.IEEE electron device letters. 1993, Vol 14, Num 3, pp 126-128, issn 0741-3106Article

Sharp-line photoluminescence of GaAs grown by low-temperature molecular beam epitaxyYU, P. W; REYNOLDS, D. C; STUTZ, C. E et al.Applied physics letters. 1992, Vol 61, Num 12, pp 1432-1434, issn 0003-6951Article

Effects of a buffer layer on free-carrier depletion in n-type GaAsLOOK, D. C; EVANS, K. R; STUTZ, C. E et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 6, pp 1280-1284, issn 0018-9383Article

Surface and interface free-carrier depletion in GaAs molecular beam epitaxial layers : demonstration of high interface chargeLOOK, D. C; STUTZ, C. E; EVANS, K. R et al.Applied physics letters. 1990, Vol 56, Num 7, pp 668-670, issn 0003-6951Article

Effects of heat treatment on sharp-line photoluminescence of GaAs grown by low-temperature molecular beam epitaxyYU, P. W; TALWAR, D. N; STUTZ, C. E et al.Applied physics letters. 1993, Vol 62, Num 21, pp 2608-2610, issn 0003-6951Article

Unpinning of GaAs surface Fermi level by 200 °C molecular beam epitaxial layerLOOK, D. C; STUTZ, C. E; EVANS, K. R et al.Applied physics letters. 1990, Vol 57, Num 24, pp 2570-2572, issn 0003-6951, 3 p.Article

Interface states in regrown GaAs p-n junctions by selective molecular beam epitaxyIKOSSI-ANASTASIOU, K; JOHNSTONE, D. K; STUTZ, C. E et al.Applied physics letters. 1992, Vol 61, Num 3, pp 297-299, issn 0003-6951Article

Sensivity of resonant excitation and photoluminescence excitation measurements to exciton localization effects in GaAs/AlGaAs quantum wellsREYNOLDS, D. C; EVANS, K. R; STUTZ, C. E et al.Applied physics letters. 1992, Vol 60, Num 8, pp 962-964, issn 0003-6951Article

High valence-band offset of GasSbAs-InAIAs quantum wells grown by molecular beam epitaxyYU, P. W; REYNOLDS, D. C; JOGAI, B et al.Applied physics letters. 1992, Vol 61, Num 19, pp 2317-2319, issn 0003-6951Article

Incorporation/desorption rate variation at heterointerfaces in III-V molecular-beam epitaxyEVANS, K. R; STUTZ, C. E; TAYLOR, E. N et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 4, pp 2427-2432, issn 0734-211XConference Paper

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaNLOOK, D. C; STUTZ, C. E; MOLNAR, R. J et al.Solid state communications. 2001, Vol 117, Num 10, pp 571-575, issn 0038-1098Article

Effect of parasitics on electrochemical capacitance-voltage profiling of pseudomorphic high electron mobility transistor structuresJOGAI, B; STUTZ, C. E.Journal of electronic materials. 1997, Vol 26, Num 7, pp 863-867, issn 0361-5235Conference Paper

New As_Ga related center in GaAsLOOK, D. C; FANG, Z.-Q; SIZELOVE, J. R et al.Physical review letters. 1993, Vol 70, Num 4, pp 465-468, issn 0031-9007Article

Phonon coupling associated with free-to-bound and bound-to-bound transitions in GaAs layers grown by molecular-beam epitaxyREYNOLDS, D. C; TALWAR, D. N; MANASREH, M. O et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 20, pp 13304-13308, issn 0163-1829Article

Effect of a magnetic field on the photoluminescence from In_xGa_1-xAs/GaAs and GaAs/Al_xGa_1-xAs quantum wellsREYNOLDS, D. C; EVANS, K. R; STUTZ, C. E et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 5, pp 4244-4248, issn 0163-1829, 5 p.Article

Double heterojunction bipolar transistor in Al_xGa_1-xAs/GaAs_1-ySb_y systemIKOSSI-ANASTASIOU, K; EZIS, A; EVANS, K. R et al.Electronics Letters. 1991, Vol 27, Num 2, pp 142-144, issn 0013-5194, 3 p.Article

Binding energy of excitons to neutral donors in In_O.1Ga_0.9As/GaAs quantum wellsREYNOLDS, D. C; EVANS, K. R; STUTZ, C. E et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 4, pp 1839-1843, issn 0163-1829Article

Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400°CLOOK, D. C; ROBINSON, G. D; SIZELOVE, J. R et al.Applied physics letters. 1993, Vol 62, Num 23, pp 3004-3006, issn 0003-6951Article